Two-dimensional analysis of substrate effects in junction f.e.t.s
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19700343?crawler=true&mimetype=application/pdf
Reference3 articles.
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-dimensional simulation for the GaAs V-groove gate MESFET's;Solid-State Electronics;1999-02
2. Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's;IEEE Transactions on Electron Devices;1993-06
3. Theorie des Ladungstransports;GaAs-Feldeffekttransistoren;1989
4. Influence ofp‐InP buffer layers on submicron InGaAs/InP junction field‐effect transistors;Applied Physics Letters;1988-12-19
5. Generalized gradual channel modeling of field-effect transistors;IEEE Transactions on Electron Devices;1988
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