Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect-Reference-Cited by-同舟云学术

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Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect

Published:2000-08 Issue:8 Volume:44 Page:1507-1509
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Niu Guofu,Cressler John D,Mathew Suraj J,Subbanna Seshu

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Non-scaling of MOSFET's linear resistance in the deep submicrometer regime;Esseni;IEEE Electron Dev Lett,1998

2. Comprehensive analysis of reverse short-channel effect in silicon MOSFET's from low-temperature operation;Szelag;IEEE Electron Dev Lett,1998

3. Modeling the anomalous threshold voltage behavior of submicrometer MOSFET's;Arora;IEEE Electron Dev Lett,1992

4. Guidelines for reverse short channel behavior;Mazure;IEEE Electron Dev Lett,1989

5. Ahlgren DC, et al., Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace. Tech Digest IEDM 1996;859–62

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