Author:
Hellberg P.-E,Zhang S.-L,Radamsson H.H,Kaplan W
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. King T-J, Pfeister JR, Shott JD, McVittie JP, Saraswat KC. IEDM Tech Digest 1990:253
2. Skotnicki T, Bouillon P, Gwoziecki R, Halimaoui A, Mourrain C, Sagnes I, Regolini JL, Joubert O, Paoli M, Schiavone P. Proc ESSDERC 1997. p. 216
3. Li VZ-Q, Mirabedini MR, Kuehn RT, Wortman JJ, Öztürk MC. IEDM Tech Digest 1997:833
4. Polycrystalline
p+-SixGe1-x as a
Single Gate in CMOS Technology
5. Ponomarev YV, Salm C, Schmitz J, Woerlee PH, Stolk PA, Gravesteijn DJ. IEDM Tech Digest 1997:829
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