Single gate 0.15 μm CMOS devices fabricated using RTCVD in-situ boron doped Si/sub 1-x/Ge/sub x/ gates-Reference-Cited by-同舟云学术

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Single gate 0.15 μm CMOS devices fabricated using RTCVD in-situ boron doped Si/sub 1-x/Ge/sub x/ gates

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Li V.Z.-Q.,Mirabedini M.R.,Kuehn R.T.,Wortman J.J.,Ozturk M.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650510.pdf?arnumber=650510

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides;Japanese Journal of Applied Physics;2004-11-10

2. Ni-Salicided Poly-Si/poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs;Japanese Journal of Applied Physics;2004-04-27

3. Physical and Electrical Properties of Polycrystalline Si[sub 1−x]Ge[sub x] Deposited Using Single-Wafer-Type Low Pressure CVD;Journal of The Electrochemical Society;2004

4. Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

5. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11

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