Author:
Orpella A,Puigdollers J,Bardés D,Alcubilla R,Marsal L.F,Pallarès J
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts;Nanba;IEEE Trans Electron Dev,1993
2. Oda K, Ohue E, Tanabe M, Shimamoto H, Onai T, Washio K. 130-GHz fT SiGe HBT technology. IEDM Tech Dig 1997;791–4
3. An amorphous SiC:H emitter heterojunction bipolar transistor;Sasaki;IEEE Electron Dev Lett,1985
4. Genuine wide-bandgap microcrystalline emitter Si-HBT with enhanced current gain by suppressing homocrystallization;Sasaki;IEEE Trans Electron Dev,1992
5. Emons CHH, Koster R, Theunissen MJJ. Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency. Bipolar/BiCMOS Circuits Tech Meeting 1994
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