A local charge control technique to improve the forward bias safe operating area of LIGBT-Reference-Cited by-同舟云学术

A local charge control technique to improve the forward bias safe operating area of LIGBT

Published:2000-07 Issue:7 Volume:44 Page:1213-1218
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hardikar S,Cao G,Xu Y,De Souza M.M,Narayanan E.M.Sankara

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT;Nagapudi;IEEE Trans Electron Dev,1998

2. Narayanan EMS, Amaratunga G, Milne W, Huang Q. Performance of 200 V CMOS compatible auxiliary cathode lateral insulated gate transistors. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 1991. p. 103

3. A new lateral IGBT for high temperature operation;Vellvehi;Solid State Electron,1997

4. Disney D, Plummer J. SOI LIGBT devices with a dual P-well implant for improved latching characteristics. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 1993. p. 254

5. Nagapudi V, Sunkavalli R, Baliga BJ. FBSOA of dielectrically isolated LDMOSFETs and LIGBTs. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 1997. p. 297

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology;IEEE Transactions on Electron Devices;2006-07

2. Influence of layout design on the performance of LIGBT;IEE Proceedings - Circuits, Devices and Systems;2006

3. An investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies;Microelectronics Journal;2001-02