Author:
Hardikar S,Xu Y.Z,Cao G.J,De Souza M.M,Sankara Narayanan E.M
Reference14 articles.
1. T. Matsudai, H. Funaki, A. Nakagawa, A safe operating area model for SOI Lateral IGBTs, Proceedings of the ISPSD'97, 1997, pp. 41–44.
2. Effect of Collector Structure on the FBSOA of the Dielectrically-Isolated LIGBT;Nagapudi;IEEE Trans. Electron Devices,1998
3. V. Nagapudi, R. Sunkavalli, B.J. Baliga, FBSOA of Dilectrically Isolated LDMOSFETs and LIGBTs, Proceedings of the ISPSD'97,1997, pp. 297–300.
4. D. Disney, J. Plummer, SOI LIGBT Devices with a Dual P-Well Implant for Improved Latching Characteristics, Proceedings of the ISPSD'93, 1993, pp. 254–258.
5. A local charge control technique to improve the FBSOA of a LIGBT;Hardikar;Solid-State Electron.,2000
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of layout design on the performance of LIGBT;IEE Proceedings - Circuits, Devices and Systems;2006