Electron transport in a model Si transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects;Fischetti;Phys Rev B,1988
2. An investigation of steady-state velocity over-shoot in silicon;Baccarani;Solid-State Electron,1985
3. The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon sub-micrometer MOS transistors;Meinerzhagen;IEEE Trans Electron Dev,1988
4. A critical examination of the assumptions underlying macroscopic transport equations for silicon devices;Stettler;IEEE Trans Electron Dev,1993
5. Elementary scattering theory of the Si MOSFET;Lundstrom;IEEE Electron Dev Lett,1997
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