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Stress-induced high-field gate leakage current in ultra-thin gate oxide

  • Published:2000-06 Issue:6 Volume:44 Page:977-980
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Wei Jianlin,Mao Lingfeng,Xu Mingzhen,Tan Changhua,Duan Xiaorong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. High-field-induced degradation in ultra-thin SiO2 films;Olivo;IEEE Trans ED,1988

2. Mechanism for stress-induced leakage currents in thin silicon dioxide films;DiMaria;J Appl Phys,1995

3. Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films;Ricco;IEEE Trans ED,1998

4. Nicollian P, Rodder M, Grider DT, Chen P. Low voltage stress-induced-leakage-current through ultrathin gate oxides. Int Reliab Phys Symp, 1999

5. Mechanism of stress-induced leakage current in MOS capacitors;Rosenbaum;IEEE Trans ED,1997

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge Trapping in HfYOx Gate Dielectrics on Strained-Si;ECS Transactions;2009-09-25

2. Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge;Microelectronic Engineering;2008-11

3. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY;International Journal of High Speed Electronics and Systems;2001-09

4. Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/ films;2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
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