Wet chemical etching survey of III-nitrides-Reference-Cited by-同舟云学术

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Wet chemical etching survey of III-nitrides

Published:1997-12 Issue:12 Volume:41 Page:1947-1951
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Vartuli C.B.,Pearton S.J.,Abernathy C.R.,MacKenzie J.D.,Ren F.,Zolper J.C.,Shul R.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

2. Microwave performance of GaN MESFETs

3. High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor

4. Directional coupler electro‐optic modulator in AlGaAs/GaAs with low voltage‐length product

5. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

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1. Indium Aluminum Nitride: A Review on Growth, Properties, and Applications in Photovoltaic Solar Cells;2024

2. Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride;The Journal of Physical Chemistry C;2023-08-17

3. Chemical etching of freestanding N-polar GaN in control of the surface morphology;Applied Surface Science;2022-04

4. H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces;Applied Surface Science;2022-04

5. Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN;Journal of Manufacturing Processes;2022-01

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