Cjc and the output conductance of advanced bipolar junction transistors under nonlocal impact ionization conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors
2. Collector design tradeoffs for low voltage applications of advanced bipolar transistors
3. Measurement of the ionization rates in diffused silicon p-n junctions
4. TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
5. Ionization Rates of Holes and Electrons in Silicon
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1. Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect;Microelectronics Reliability;2001-02
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