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GaAs and AlGaAs photodiodes for ionizing radiation detectors

  • Published:2003-10 Issue:10 Volume:47 Page:1835-1841
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Andreev V.M.,Milanova M.M.,Khvostikov V.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence of bulk α -In2Se3 crystals irradiated by high-energy electrons;Applied Physics Letters;2023-12-25

2. Dilute nitrides heterostructures grown by liquid phase epitaxy for solar cells applications;Journal of Physics: Conference Series;2021-02-01

3. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16

4. Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-06

5. Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes;Journal of Lightwave Technology;2006-02
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