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Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

  • Published:2003-11 Issue:11 Volume:47 Page:1989-1994
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Huang H.K.,Wang C.S.,Wang Y.H.,Wu C.L.,Chang C.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. W-band low-noise InAlAs/InGaAs lattice-matched HEMT’s;Chao;IEEE Electron. Dev. Lett.,1990

2. Ultralow-noise W-band pseudomorphic InGaAs HEMT’s;Tan;IEEE Electron. Dev. Lett.,1990

3. Determination of valence and conduction-band discontinuities at the (Ga,In)P/GaAs heterojunction by C–V profiling;Rao;J. Appl. Phys.,1986

4. Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT’s by means of low-frequency noise and transconductance dispersion characterizations;Chan;IEEE Trans. Electron. Dev.,1994

5. Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications;Okamoto;IEEE MTT-S Dig.,1997

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1. Frequency and Temperature-Based Noise Figure Modeling for GaAs HEMTs;2022 IEEE 3rd Global Conference for Advancement in Technology (GCAT);2022-10-07

2. Modeling of Noise Figure for GaAs pHEMTs based on Frequency and Temperature;2022 2nd Asian Conference on Innovation in Technology (ASIANCON);2022-08-26

3. Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs;2022 International Conference on Innovations in Science, Engineering and Technology (ICISET);2022-02-26

4. Material and device characterization of InGaP solar cells grown on GaAs misoriented substrates by metal-organic chemical vapor deposition;Solar Energy;2021-05

5. Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell;Scientific Reports;2017-07-10
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