Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

Published:2022-02-26 Issue: Volume: Page:
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Container-title:2022 International Conference on Innovations in Science, Engineering and Technology (ICISET)
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Author:

Alim Mohammad Abdul¹,Rezazadeh Ali A.²,Gaquiere Christophe³

Affiliation:

1. University of Chittagong,Electrical and Electronic Engineering,Chittagong,Bangladesh

2. The University of Manchester,Electrical and Electronic Engineering,Manchester,UK

3. IEMN, The University of Lille,Lille,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9775773/9775774/09775920.pdf?arnumber=9775920

Reference14 articles.

1. Noise modeling and measurement techniques (HEMTs)

2. Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements;chen;IEEE Trans Electron Devices,2005

3. A new method for determining the FET small-signal equivalent circuit

4. Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

5. Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers;et al,2004

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