1. The International Technology Roadmap for Semiconductors 1999/2001, Semiconductor Industry Association 1999, 2001
2. 25 nm CMOS design consideration;Taur;IEDM Tech. Dig.,1998
3. 50-nm vertical sidewall transistors with high channel doping concentrations;Schulz;IEDM Tech. Dig.,2000
4. Vertical Si-metal-oxide-semiconductor field effect transistors with channel lengths of 50 nm by molecular beam epitaxy;Gossner;Jpn. J. Appl. Phys.,1994
5. Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime;Kedziersky;IEDM Tech. Dig.,2000