Author:
Mnatsakanov Tigran T.,Yurkov Sergey N.,Levinshtein Michael E.,Tandoev Aleksey G.,Agarwal Anant K.,Palmour John W.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Frequency properties of 4H-SiC thyristors at high current density;Levinshtein;Semicond. Sci. Technol.,1999
2. Turn-off operation of a MOS-Gate 2.6 kV 4H-SiC GTO thyristor;Ivanov;Solid-State Electron.,2000
3. Temperature dependence of turn-on processes in 4H-SiC thyristors;Levinshtein;Solid-State Electron.,2001
4. Levinshtein ME, Palmour JW, Rumyantsev SL, and Singh R. Steady state current–voltage characteristics of 4H-SiC thyristors. Electrochem Society, Inc. Meeting Abstracts, vol. 97-1, p. 488, Spring Meeting, Montreal, Que., Canada, May 4–9, 1997
5. Steady state current–voltage characteristics of 4H-SiC thyristors at high and superhigh current densities;Levinshtein;Semicond. Sci. Technol.,1997
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