Temperature dependence of turn-on processes in 4H–SiC thyristors-Reference-Cited by-同舟云学术

Temperature dependence of turn-on processes in 4H–SiC thyristors

Published:2001-03 Issue:3 Volume:45 Page:453-459
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Levinshtein Michael E,Mnatsakanov Tigran T,Ivanov Pavel A,Agarwal Anant K,Palmour John W,Rumyantsev Sergey L,Tandoev Aleksey G,Yurkov Sergey N

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Turn-on process in high voltage 4H–SiC thyristors;Dyakonova;Semicond Sci Technol,1998

2. Steady state current–voltage characteristics of 4H–SiC thyristors at high and superhigh current densities;Levinshtein;Semicond Sci Technol,1997

3. Levinshtein ME, Palmour JW, Rumyantsev SL, Singh R. Steady state current–voltage characteristics of 4H–SiC thyristors. Electrochem Society, Inc, Meeting Abstracts, vol. 97–1. Spring Meeting – Montreal, Quebec, Canada. 4–9 May, 1977. p. 488

4. Steady-state and transient forward current–voltage characteristics of 4H–silicon carbide 5.5 kV diodes at high and superhigh current densities;Dyakonova;IEEE Trans ED,1999

5. Palmour JW, Allen ST, Singh R, Lipkin LA, Waltz DG. 4H–silicon carbide power switching devices. In: Nakashima S, Matsunami H, Yoshida S, Harima H, editors. Silicon carbide and related materials 1995. Inst Phys Conf Ser no 142. Bristol: Inst Phys Publishing; 1995. p. 813–6

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phonon-limited carrier mobility and temperature-dependent scattering mechanism of 3C -SiC from first principles;Physical Review B;2019-01-28

2. SiC-based electronics (100th anniversary of the Ioffe Institute);Uspekhi Fizicheskih Nauk;2018-10

3. Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors;Semiconductor Science and Technology;2014-11-13

4. Optical triggering of 12 kV, 100 A 4H-SiC thyristors;Semiconductor Science and Technology;2011-12-09

5. Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs, and GTOs;Silicon Carbide;2011-03-28