Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

Author:

Wang W.,Hu C.,Li F.N.,Li S.Y.,Liu Z.C.,Wang F.,Fu J.,Wang H.X.

Funder

National High-tech R&D Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002

2. Hole-drift velocity in natural diamond;Reggiani;Phys. Rev. B Condens. Matter,1981

3. Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications;Umezawa;Jpn. J. Appl. Phys.,2014

4. High temperature, high voltage operation of diamond Schottky diode;Vescan;Diam. Relat. Mater.,1998

5. Schottky junction properties of the high conductivity layer of diamond;Takeuchi;Diam. Relat. Mater.,2002

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