A novel structure to improve DIBL in fully-depleted silicon-on-diamond substrate
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Silicon-on-Insulator Technology: Materials to VLSI;Colinge,2004
2. SOI technology for the GHz era;Shahidi;IBM J. Res. Dev.,2002
3. High-temperature and self-heating effects in fully depleted SOI MOSFETs;Goel;Microelectron. J.,2006
4. Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation;Fiegna;IEEE Trans. Electron Devices,2008
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1. An Analytical Computation of Threshold Voltage for Ultra-Thin Double Insulating Silicon-on-Diamond MOSFET;Journal of Association of Electrical and Electronics Engineers;2024-03-01
2. A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET;Journal of Association of Electrical and Electronics Engineers;2024-03-01
3. A capacitance model for threshold voltage computation of double-insulating fully-depleted silicon-on-diamond MOSFET;The European Physical Journal Plus;2023-12-18
4. A Capacitance Model for Front- and Back-Gate Threshold Voltage Computation of Ultra-Thin-Body and BOX Double-Insulating Silicon-on-Diamond MOSFET;Jordan Journal of Electrical Engineering;2023
5. Substrate BOX engineering to mitigate the self-heating induced degradation in nanosheet transistor;Microelectronics Journal;2022-11
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