Beryllium-doped single-crystal diamond grown by microwave plasma CVD
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
3. 2 W∕mm output power density at 1 GHz for diamond FETs
4. Diamond-based RF power transistors: Fundamentals and applications
5. Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth
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1. Impurity atom configurations in diamond and their visibility via scanning transmission electron microscopy imaging;Electronic Structure;2023-09-01
2. First-Principles Calculation to N-type Beryllium Related Co-doping and Beryllium Doping in Diamond;Computational Science – ICCS 2023;2023
3. CVD Diamond;Transactions of the Indian Institute of Metals;2019-01
4. In situ doping of diamond coatings with silicon, aluminum and titanium through a modified laser-based CVD process;Diamond and Related Materials;2014-01
5. A review of diamond synthesis by CVD processes;Diamond and Related Materials;2011-10
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