Properties of 4H silicon carbide detectors in the radiation detection of 86 MeV oxygen particles

Author:

Liu L.Y.,Liu J.L.,Chen L.,Zhang Z.B.,Jin P.,Ruan J.L.,Chen G.,Liu A.,Bai S.,Ouyang X.P.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference26 articles.

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2. Silicon carbide radiation detectors: progress, limitations and future directions;Ruddy;Mater. Res. Soc. Symp.,2013

3. High-resolution alpha-particle spectrometry using silicon carbide semiconductor detectors;Ruddy,2005

4. Observation of impact ionization in 4H- SiC radiation detectors;Ivanov;Nucl. Inst. Methods Phys. Res. A,2009

5. Epitaxial silicon carbide charge particle detectors;Nava;Nucl. Inst. Methods Phys. Res. A,1999

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