Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+n junctions-Reference-Cited by-同舟云学术

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Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+n junctions

Published:2007-01 Issue:1 Volume:16 Page:6-11
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Menichelli David,Scaringella Monica,Moscatelli Francesco,Bruzzi Mara,Nipoti Roberta

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

2. Interface states in high-temperature gas sensors based on silicon carbide

3. 4H-silicon carbide schottky barrier diodes for microwave applications

4. Radiation-hard semiconductor detectors for SuperLHC

5. Minimum Ionizing and Alpha Particles Detectors Based on Epitaxial Semiconductor Silicon Carbide

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

2. Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2023-08

3. Temperature dependence of avalanche breakdown in 4H-SiC devices;Journal of Applied Physics;2023-06-16

4. Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC;Defect and Diffusion Forum;2023-06-06

5. Epitaxial SiC Dosimeters and Flux Monitoring Detectors for Proton Therapy Beams;Materials;2023-05-10

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