Author:
Golding B,Bednarski-Meinke C,Dai Z
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Textured growth of diamond on silicon viain situcarburization and bias‐enhanced nucleation
3. The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition process
4. C. Wild, N. Herres, R. Locher, W. Mueller-Sebert, P. Koidl, in: K. Kobashi, M. Yoshikawa (Eds.), Advances in New Diamond Science and Technology, Tokyo, 1994, p. 149
5. The nucleation and growth of large area, highly oriented diamond films on silicon substrates
Cited by
36 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献