The role of etching on growth of adlayer graphene by chemical vapor deposition-Reference-Cited by-同舟云学术

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The role of etching on growth of adlayer graphene by chemical vapor deposition

Published:2021-11 Issue: Volume:119 Page:108549
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Guo Zi,Zu Pengjiao,Liu Ze,Cecillia Muswelu,Cao Yuhao,Li Jun,Li Jia

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. The rise of graphene;Geim;Science,2007

3. Large-area synthesis of high-quality and uniform graphene films on copper foils;Li;Science,2009

4. Millimeter-size single-crystal graphene by suppressing evaporative loss of cu during low pressure chemical vapor deposition;Chen;Adv. Mater.,2013

5. The role of surface oxygen in the growth of large single-crystal graphene on copper;Hao;Science,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of Nucleation Density in Twisted Graphene Domains Grown on Graphene/SiC Template by Sequential Thermal Process;Crystal Growth & Design;2024-02-01

2. Graphene-Based Physically Unclonable Functions with Dual Source of Randomness;ACS Applied Materials & Interfaces;2023-07-10

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