A monolithic, back-gated diamond field-effect transistor for tunable color centers-Reference-Cited by-同舟云学术

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A monolithic, back-gated diamond field-effect transistor for tunable color centers

Published:2021-11 Issue: Volume:119 Page:108597
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Oing D.,Ney M.,Bendt G.,Schulz S.,Geller M.,Wöhrl N.,Lorke A.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Radiation damage tests on diamond and scintillation detector components for the ITER radial neutron camera;Baccaro;IEEE Trans. Nucl. Sci.,2018

2. Silicon compatible materials for harsh environment sensors;Kroetz;Sensors Actuators,1999

3. Diamond semiconductor performances in power electronics applications;Perez;Diam. Relat. Mater.,2020

4. High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation;Kawarada;Jpn. J. Appl. Phys.,2012

5. The Properties of Natural and Synthetic Diamond;Field,1992

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods for Color Center Preserving Hydrogen‐Termination of Diamond;Advanced Materials Interfaces;2024-07-11

2. Research progress of optoelectronic devices based on diamond materials;Frontiers in Physics;2023-08-10

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