Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates-Reference-Cited by-同舟云学术

Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

Published:2022-03 Issue: Volume:123 Page:108815
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Taylor Andrew,Baluchová Simona,Fekete Ladislav,Klimša Ladislav,Kopeček Jaromír,Šimek Daniel,Vondráček Martin,Míka Luděk,Fischer Jan,Schwarzová-Pecková Karolina,Mortet Vincent

Funder

Charles University

Grantová Agentura, Univerzita Karlova

Ministerstvo Školství, Mládeže a Tělovýchovy

Grantová Agentura České Republiky

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference37 articles.

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2. Properties of boron-doped (113) oriented homoepitaxial diamond layers;Mortet;Diam. Relat. Mater.,2021

3. Phosphorus-doped (113) CVD diamond: a breakthrough towards bipolar diamond devices;Pinault-Thaury;Appl. Phys. Lett.,2019

4. Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond;Pinault-Thaury;Carbon,2021

5. High growth rate homoepitaxial diamond deposition on off-axis substrates;Bauer;Diam. Relat. Mater.,2005

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