Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices-Reference-Cited by-同舟云学术

Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

Published:2019-03-18 Issue:11 Volume:114 Page:112106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pinault-Thaury Marie-Amandine¹,Temgoua Solange¹,Gillet Rémi¹,Bensalah Hakima¹,Stenger Ingrid¹,Jomard François¹,Issaoui Riadh²,Barjon Julien¹

Affiliation:

1. Groupe d'Etude de la Matière Condensée (GEMaC-UMR8635), CNRS, Université de Versailles St-Quentin-En-Yvelines (UVSQ), Université Paris-Saclay, 45 av des Etats Unis, 78035 Versailles Cedex, France

2. Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Paris 13, Sorbonne Paris Cité, CNRS, 93430 Villetaneuse, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079924

Reference36 articles.

1. Single crystal diamond wafers for high power electronics

2. Synthesis of thick and high-quality homoepitaxial diamond with high boron doping level: Oxygen effect

3. Growth and characterization of freestanding p+ diamond (100) substrates prepared by hot-filament chemical vapor deposition

4. Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

5. N-type control of single-crystal diamond films by ultra-lightly phosphorus doping

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