High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate-Reference-Cited by-同舟云学术

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High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate

Published:2022-01 Issue: Volume:121 Page:108782
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Choi Uiho,Kwak Taemyung,Han Sanghoon,Kim Seong-Woo,Nam Okhyun

Funder

Institute for Information and Communications Technology Promotion

Ministry of Science and ICT, South Korea

Korea Institute of Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Ultrawide-bandgap semiconductors: research opportunities and challenges;Tsao;Adv. Electron. Mater.,2018

2. Radiation hardness studies of CVD diamond detectors;Bauer;Nucl. Inst. Methods Phys. Res. A,1995

3. High-current metal oxide semiconductor field-effect transistors on h-terminated diamond surfaces and their high-frequency operation;Kawarada;Jpn. J. Appl. Phys.,2012

4. A high frequency hydrogen-terminated diamond MISFET with fTfmax of 70/80 GHz;Yu;IEEE Electron Device Lett.,2018

5. Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C;Liu;J. Phys. D. Appl. Phys.,2019

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1. Stability Study of Synthetic Diamond Using a Thermally Controlled Biological Environment: Application towards Long-Lasting Neural Prostheses;Sensors;2024-06-04

2. Micro- to nano-scale topographical etching of diamond substrate via anisotropically atomic removal;Applied Surface Science;2024-05

3. N- and P-Type Doping of Diamonds: A Review;2024

4. High efficiency of boron doping and fast growth realized with a novel gas inlet structure in diamond microwave plasma chemical vapor deposition system;Carbon Letters;2023-12-13

5. Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm);IEEE Electron Device Letters;2023-10

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