High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond

Author:

Xing Kaijian,Zhang Sa,Tsai Alexander,Xiao Haiyan,Creedon Daniel L.,Yianni Steve A.,McCallum Jeffrey C.,Pakes Christopher I.,Qi Dong-Chen

Funder

Australian Research Council

Queensland University of Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Diamond-based RF power transistors: fundamentals and applications;Kasu;Diam. Relat. Mater.,2007

2. Surface transfer doping of diamond;Ristein;J. Phys. D. Appl. Phys.,2004

3. Origin of surface conductivity in diamond;Maier;Phys. Rev. Lett.,2000

4. Chapter 4 Surface Conductivity of Diamond;Ley,2009

5. Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer;Hirama;Jpn. J. Appl. Phys.,2012

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