Silicon carbide for high-power applications at MM and THz ranges-Reference-Cited by-同舟云学术

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Silicon carbide for high-power applications at MM and THz ranges

Published:2017-11 Issue: Volume:80 Page:1-4
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Parshin Vladimir,Serov Evgeny^ORCID,Denisov Grigoriy,Garin Boris,Denisyuk Roman,V'yuginov Vladimir,Klevtsov Valeriy,Travin Nikolai

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics;Liu;Appl. Phys. Rev.,2015

2. Potentials of SiC as a gyrotron window material;Gao,2004

3. Temperature studies of dielectric loss in silicon carbide;Jones,2010

4. Low loss limits in materials at the near millimeter range;Garin,1996

5. Lower loss limits at millimeter and terahertz ranges;Garin,2004

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1. Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting;Nano Energy;2024-09

2. Influence of crystal structure on the thermophysical properties and figures-of-merit of propylene glycol: water-based SiC nanofluids;Powder Technology;2024-01

3. Complex Permittivity in the AlN–SiC Composite in the 1–100 GHz Microwave Frequency Range;Powder Metallurgy and Metal Ceramics;2023-05

4. Electrically controlled terahertz modulator with deep modulation and slow wave effect via a HEMT integrated metasurface;Optics Express;2022-04-27

5. Thermally Polarized Solid-State Spin Sensor;Physical Review Applied;2022-04-04

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