Rapid growth of diamond and its morphology by in-liquid plasma CVD-Reference-Cited by-同舟云学术

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Rapid growth of diamond and its morphology by in-liquid plasma CVD

Published:2016-03 Issue: Volume:63 Page:12-16
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Harada Y.,Hishinuma R.,Terashima C.,Uetsuka H.,Nakata K.,Kondo T.,Yuasa M.,Fujishima A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD;Chayahara;Diamond Relat. Mater.,2004

2. Recent advances in high-growth rate single-crystal CVD diamond;Liang;Diamond Relat. Mater.,2009

3. Experimentally defining the safe and efficient, high pressure microwave plasma assisted CVD operating regime for single crystal diamond synthesis;Lu;Diamond Relat. Mater.,2013

4. Microwave plasma reactor design for high pressure and high power density diamond synthesis;Gu;Diamond Relat. Mater.,2012

5. Submerged synthesis of diamond in liquid alcohol plasma;Toyota;Diamond Relat. Mater.,2008

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced growth rates of N-type phosphorus-doped polycrystalline diamond via in-liquid microwave plasma CVD;Solid State Sciences;2024-09

2. Ultra-high growth rate of boron-doped diamond films with optimized growth parameters using in-liquid microwave plasma CVD;Diamond and Related Materials;2023-12

3. Characteristics of methane wet reforming driven by microwave plasma in liquid phase for hydrogen production;International Journal of Hydrogen Energy;2021-10

4. High-speed synthesis of heavily boron-doped diamond films by in-liquid microwave plasma CVD;Diamond and Related Materials;2019-02

5. Growth and characterization of polycrystalline diamond films on silicon using sugarcane bagasse as carbon precursor at atmospheric pressure by thermal chemical vapor deposition;Diamond and Related Materials;2018-08

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