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Recent advances in high-growth rate single-crystal CVD diamond

  • Published:2009-05 Issue:5-8 Volume:18 Page:698-703
  • ISSN:0925-9635
  • Container-title:Diamond and Related Materials
  • language:en
  • Short-container-title:Diamond and Related Materials

Author:

Liang Qi,Yan Chih-shiue,Meng Yufei,Lai Joseph,Krasnicki Szczesny,Mao Ho-kwang,Hemley Russell J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

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1. Mega-electron volt proton detection using a thin diamond membrane detector;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

2. Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111);Diamond and Related Materials;2024-04

3. Hall measurements on nitrogen-doped Ib-type synthetic single crystal diamonds at temperatures 550–1143 K;Applied Physics Letters;2024-03-04

4. Recent progress in homoepitaxial single-crystal diamond growth via MPCVD;Journal of Materials Science: Materials in Electronics;2024-03

5. Fabrication, microstructure and optical properties of 〈110〉 textured CVD polycrystalline diamond infrared materials;Diamond and Related Materials;2024-01
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