High-pressure and high-temperature annealing of diamond ion-implanted with various elements
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. 2 W∕mm output power density at 1 GHz for diamond FETs
3. Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
4. Resistivity of chemical vapor deposited diamond films
5. Diamond-based RF power transistors: Fundamentals and applications
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1. Impurity atom configurations in diamond and their visibility via scanning transmission electron microscopy imaging;Electronic Structure;2023-09-01
2. The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure;Japanese Journal of Applied Physics;2023-04-01
3. Long dephasing time of NV center spins in diamond layers formed by hot ion implantation and high pressure high temperature annealing;Diamond and Related Materials;2021-12
4. FIB-SEM cathodoluminescence tomography: practical and theoretical considerations;Journal of Microscopy;2011-06-22
5. Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;2010-11-05
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