Epitaxial structures based on compensated GaAs for γ- and X-ray detectors-Reference-Cited by-同舟云学术

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Epitaxial structures based on compensated GaAs for γ- and X-ray detectors

Published:2001-06 Issue:1 Volume:466 Page:33-38
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Budnitsky D.L.,Germogenov V.P.,Guschin S.M.,Larionov A.A.,Porokhovnichenko L.P.,Potapov A.I.,Tolbanov O.P.,Vorobiev A.P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

2. Exploration of GaAs structures with π-ν junction for coordinate sensitive detectors

3. Transport and charge collection in compensated GaAs particle detectors

4. G.M. Martin, in: G.J. Rees (Eds.), Semi-Insulating III–V Materials, Shiva, Nantwich, 1980, p. 362.

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1. GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis;Journal of Instrumentation;2018-01-24

2. Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers;Journal of Instrumentation;2017-02-06

3. Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide;Russian Physics Journal;2016-06

4. Temperature dependencies of current-voltage characteristics of GaAs:Cr;Journal of Instrumentation;2016-03-29

5. Impact of thermal treatment on electrical characteristics and charge collection efficiency of Me-GaAs:Cr-Me x-ray sensors;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII;2015-08-26

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