Influence of damage caused by Kr ions and neutrons on electrical properties of silicon detectors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference27 articles.
1. Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectors
2. Fast neutron damage in silicon detectors
3. Silicon detector developments for calorimetry: Technology and radiation damage
4. Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2
5. Current-voltage and impedance characteristics of neutron irradiated silicon detectors at fluences up to 1016 n/cm2
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