Escape peak ratios in silicon X-ray charge coupled devices (CCDs)-Reference-Cited by-同舟云学术

Escape peak ratios in silicon X-ray charge coupled devices (CCDs)

Published:1997-01 Issue:2-3 Volume:384 Page:403-409
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

McCarthy Kieran J,Owens Alan,Keay Adam

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. The escape peak in Si(Li) planar detectors

2. The X-ray energy response of silicon Part A. Theory

3. Modelling the X-ray response of charge coupled devices

4. Proc. 10th Symp. on Photoelectric Imaging Devices;McCarthy,1992

5. A. Owens, A.F. Abbey, W. Burkert, H. Brauninger, C. Castelli, H. Chapman, J. Dowson, G.W. Fraser, Y. Li, K.J. McCarthy, P. Poole, M.R. Sims, J. Spragg, D.J. Watson, A. Wells and R. Willingale, J. X-ray Sci. and Technology, in press.

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