New model of gate-induced drain current density in an NMOS transistor-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

New model of gate-induced drain current density in an NMOS transistor

Published:1998-11 Issue:11 Volume:29 Page:813-816
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Bouhdada A.,Touhami A.,Bakkali S.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. MOSFET drain breakdown voltage

2. Subbreakdown drain leakage current in MOSFET

3. Proc. VLSI Symp.;Banergee,1987

4. Proc. Solid State Devices Matter;Risch,1988

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of OFF-State Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs;IEEE Transactions on Electron Devices;2019-12

2. Investigation and process optimization of SONOS cell’s drain disturb in 2-transistor structure flash arrays;Solid-State Electronics;2017-03

3. Investigations on the Gate-Induced Drain Leakage Current of Polycrystalline-Silicon Thin-Film Transistor and Its Suppression With Drain Bias Sweep;IEEE Transactions on Electron Devices;2016-04

4. A New Investigation of Data Retention Time in Truly Nanoscaled DRAMs;IEEE Electron Device Letters;2009-08

5. Impact of interface traps on gate-induced drain leakage current inn-type metal oxide semiconductor field effect transistor;International Journal of Electronics;2005-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP