Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability

Author:

Breglio G,Rinaldi N,Spirito P

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. Transistors design and thermal stability;Gaur;IEEE Transactions on Electron Devices,1973

2. P.L. Hower, D.L. Blackburn, F.F. Oettinger, S. Rubin, Stable hot spot and second breakdown in power transistors, PESC 76 Record, IEEE Power Electronics Specialist Conference, 1976, pp. 234–246.

3. MOSFET SOA Thermal Current Focusing Affects Power MOSFET Operation;Ronan;PCIM,1998

4. G. Breglio, F. Frisina, A. Magrı̀, P. Spirito, Electro-Thermal instability in low voltage Power MOS: Experimental characterization, ISPSD ’99, Toronto, Canada, 26–28 May, 1999.

5. G. Breglio, S. Pica, A. Tartaglia, P. Spirito, Experimental Detection of Time Dependent Temperature Maps in Power Bipolar Transistors, Therminic ’97 Workshop, Cannes, France, 20–24 September, 1997.

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