Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors-Reference-Cited by-同舟云学术

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Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

Published:2020-12 Issue:4 Volume:7 Page:28-35
ISSN:2329-9207
Container-title:IEEE Power Electronics Magazine
language:
Short-container-title:IEEE Power Electron. Mag.

Author:

Lidow Alex,Strittmatter Robert,Zhang Shengke,Pozo Alejandro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/6570649/9296856/09296890.pdf?arnumber=9296890

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-Chip Concurrent Device Aging Prognosis and Dielectric Failure Detection for GaN Power Devices;IEEE Transactions on Power Electronics;2024-09

2. Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs;IEEE Power Electronics Magazine;2024-03

3. Comparison of Si SJMOS and SiC MOSFET for Single Phase PFC Application;IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society;2022-10-17

4. State of the Art Technologies in Fault Diagnosis of Electric Vehicles: A Component-Based Review;IEEE Transactions on Transportation Electrification;2022

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