1. T. Ritzdorf, L. Graham, S. Jin, C. Mu, D. Fraser, Self-annealing of electrochemically deposited copper films in advanced interconnect applications, Proceedings of the IEEE International Interconnect Technology Conference, 1998, pp.166–168.
2. K. Ueno, T. Ritzdorf, S. Grace, Seed effect on self-annealing of electroplated copper films, Proceedings of the Advanced Metallization Conference, 1999, pp. 95–101.
3. C. Cabral, P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, T.M. Shaw, R. Rosenberg, J.M.E. Harper, P.W. DeHaven, P.S. Locke et al., Room temperature evolution of microstructure and resistivity in electroplated copper films, Proceedings of the Advanced Metallization Conference, 1998, pp. 81–87.
4. C. Lingk, M.E. Gross, W.L. Brown, T. Siegrist, E. Coleman, WY-C. Lai, J.F. Miner, T. Ritzdorf, J. Turner, K. Gibbons, Pole figure analysis of electroplated Cu in damascene trenches, Proceedings of the Advanced Metallization Conference, 1998, pp. 73–79.
5. Q.T. Jiang, R. Mikkola, B. Carpenter, M.E. Thomas, Room temperature film property changes in electro-deposited Cu thin films, Proceedings of the Advanced Metallization Conference, 1998, pp. 177–181.