The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source-Reference-Cited by-同舟云学术

The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source

Published:2001-09 Issue:9 Volume:32 Page:769-777
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Jansen Henri,de Boer Meint,Wensink Henk,Kloeck Ben,Elwenspoek Miko

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control;Jansen;J. Micromech. Microengng.,1995

2. H.V. Jansen, M. deBoer, R. Wiegerink, N. Tas, E. Smulders, C. Neagu, M. Elwenspoek, RIE lag in high aspect ratio trench etching of silicon, Microelectronic Engineering 35, Glasgow, 1997.

3. Microwave plasma etching;Suzuki;Jpn. J. Appl. Phys.,1977

4. Flow rate effects in plasma etching;Chapman;J. Vac. Sci. Technol.,1978

5. The implication of flow-rate dependencies in plasma etching;Chapman;J. Appl. Phys.,1980

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