Giant piezoelectric effect in GaN self-assembled quantum dots
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxial growth of highly strained InxGa1−xAs on CaAs(100);Guha;Appl. Phys. Lett.,1990
2. Dislocation-free Stranski–Krastanov growth of Ge on Si;Eaglesham;Phys. Rev. Lett.,1990
3. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers;Kamath;Electron. Lett.,1996
4. InAs–GaAs quantum pyramid lasers: in situ growth, radiative lifetimes and polarization properties;Bimberg;Jpn. J. Appl. Phys.,1996
5. Stranski–Krastanov growth mode during the molecular beam epitaxy of highly strained GaN;Daudin;Phys. Rev. B,1997
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