Oxidation of III–V semiconductors-Reference-Cited by-同舟云学术

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Oxidation of III–V semiconductors

Published:2007-01 Issue:1 Volume:49 Page:31-41
ISSN:0010-938X
Container-title:Corrosion Science
language:en
Short-container-title:Corrosion Science

Author:

Graham M.J.,Moisa S.,Sproule G.I.,Wu X.,Landheer D.,SpringThorpe A.J.,Barrios P.,Kleber S.,Schmuki P.

Publisher

Elsevier BV

Subject

General Materials Science,General Chemical Engineering,General Chemistry

Reference24 articles.

1. Physics and Chemistry of III–V Compound Semiconductor Interfaces;Wilmsen,1985

2. Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers

3. Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes

4. Thermal Oxidation of III-V Materials and Heterostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anodic oxides on InAlP formed in sodium tungstate electrolyte;Corrosion Science;2010-02

2. Synthesis of InP nanofibers from tri(m-tolyl)phosphine: an alternative route to metal phosphidenanostructures;Dalton Trans.;2010

3. [sup 18]O Tracer Study of Porous Film Growth on Aluminum in Phosphoric Acid;Journal of The Electrochemical Society;2010

4. Modern analytical techniques in high temperature oxidation and corrosion;Developments in High Temperature Corrosion and Protection of Materials;2008

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