Design and analysis of electrostatic doped Schottky barrier CNTFET based low power SRAM
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering
Reference35 articles.
1. Roadmap for 22nm and beyond;Iwai;Microelectron Eng,2009
2. Chen T-C. Overcoming research challenges for CMOS scaling: Industry directions. In: Proceedings of international conference on solid-state and IC technology. Shanghai; 2006. p. 4–7.
3. Single-walled carbon nanotube electronics;McEuen;IEEE Trans Nanotechnol,2002
4. Shahi AAM, Zarkesh-Ha P, Elahi M. Comparison of variations in MOSFET versus CNFET in gigascale integrated systems. In: Proceedings of thirteenth international symposium on quality electronic design (ISQED). Santa Clara (CA); 2012. p. 378–83.
5. Room temperature transistor based on a single carbon nanotube;Tans;Nature,1998
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Linearity and RF analysis of double gate reverse T-shaped TFET with L-shaped pocket across the Si-Ge source region;Physica Scripta;2023-09-05
2. Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET;Journal of Electronic Materials;2023-08-04
3. Investigation of a dual gate pocket-doped drain engineered tunnel FET and its reliability issues;Applied Physics A;2023-01-12
4. Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology;AEU - International Journal of Electronics and Communications;2022-09
5. Design of CNTFET based Domino Wide OR Gates using Dual Chirality for Reducing Subthreshold Leakage Current;Silicon;2022-01-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3