A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology-Reference-Cited by-同舟云学术

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A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology

Published:2024-10 Issue: Volume:185 Page:155466
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Lombardo Matteo,Centurelli Francesco,Monsurrò Pietro,Trifiletti Alessandro

Publisher

Elsevier BV

Reference40 articles.

1. A 23-mW 24-GS/s 6-bit voltage-time hybrid time-interleaved ADC in 28-nm CMOS;Xu;IEEE J Solid-State Circ,2017

2. A 24–72-GS/s 8-b time-interleaved SAR ADC with 2.0-3.3-pJ/conversion and > 30 dB SNDR at Nyquist in 14-nm CMOS FinFET;Kull;IEEE J Solid-State Circ,2018

3. ‘A 56 GS/s 8 bit time-interleaved ADC in 28 nm CMOS’;Luan;MDPI Electronics,2022

4. 32-GS/s 6-bit DAC based on SiGe technology for IM-DD OFDM systems with non-uniform quantization;Li;Opt Express,2019

5. ‘A 20-GS/s 5-b SiGe ADC for 40-Gb/s coherent optical links’;Lee;IEEE Trans Circ Syst I Regular Papers,2010

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