Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design-Reference-Cited by-同舟云学术

Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design

Published:2022-02 Issue: Volume:144 Page:154045
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Gupta Neha,Kumar Ajay

Funder

Jaypee Institute of Information Technology

Delhi Technological University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference35 articles.

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