A Comprehensive Analysis of Nanosheet FET and its CMOS Circuit Applications at Elevated Temperatures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02496-2.pdf
Reference36 articles.
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2. Sreenivasulu VB, Narendar V (2022) Design insights of nanosheet FET and CMOS circuit applications at 5-nm technology node. IEEE Trans Electron Devices 69(8):4115–4122. https://doi.org/10.1109/TED.2022.3181575
3. Jaisawal RK, Rathore S, Kondekar PN, Bagga N (2023) Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants. Solid State Electron 199:108531. https://doi.org/10.1016/j.sse.2022.108531
4. Rathore S, Jaisawal RK, Suryavanshi P, Kondekar PN (2022) Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET. Semicond Sci Technol 37. https://doi.org/10.1088/1361-6641/ac62fb
5. Jaisawal RK, Rathore S, Gandhi N, Kondekar PN, Bagga N (2022) Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET. Semicond Sci Technol 37(11). https://doi.org/10.1088/1361-6641/ac9250
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