LPCVD of silicon dioxide by pyrolysis of teos in a rapid thermal processor
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate
2. The step coverage of undoped and phosphorus-doped SiO2 glass films
3. Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS): I . Boron and Phosphorus Doped Films
4. Modeling of low-pressure deposition of SiO2by decomposition of TEOS
5. The Deposition of Silicon Dioxide Films at Reduced Pressure
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2. CVD of Poly(α,α′-dimethyl-p-xylylene) and Poly(α,α,α′, α′-tetramethyl-p-xylylene)-co-poly(p-xylylene) from Alkoxide Precursors I: Optical Properties and Thermal Stability;Chemical Vapor Deposition;2011-09
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4. Low Pressure Chemical Vapor Deposition of Silicon Dioxide Films by Thermal Decomposition of Tetra‐alkoxysilanes;Journal of The Electrochemical Society;1995-02-01
5. Thin-Film Deposition;Rapid Thermal Processing;1993
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