Evolution of point defects during swirl formation in semiconductors-Reference-Cited by-同舟云学术

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Evolution of point defects during swirl formation in semiconductors

Published:1993-01 Issue:5-6 Volume:15 Page:347-352
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Verner I.V.,Gerasimenko N.N.,Zhang Y.,Corbett J.W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Defects in silicon substrates

2. Defects in semiconductors;de Kock,1981

3. Defects in semiconductors II;Abe,1983

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing;Semiconductor physics, quantum electronics and optoelectronics;2009-12-04

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