Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing-Reference-Cited by-同舟云学术

Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Published:2009-12-04 Issue:1 Volume:13 Page:074-078
ISSN:1560-8034
Container-title:Semiconductor physics, quantum electronics and optoelectronics
language:
Short-container-title:Semicond. phys. quantum electron. optoelectron.

Author:

Smyntyna V. A.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. 3. Th. Wetzel, J. Virbulis, Modeling in industrial silicon wafer manufacturing - from crystal growth to device processes // Intern. Scientific Colloquium Modeling for Electromagnetic Processing. March 24-26, 2003, Hannover, p. 67-72.

4. 4. O. Sviridova, Reasons of dislocation and stacking fault appearance and annihilation in oxidated silicon wafers // Intern. students and young scientists' conference in theoretical and experimental physics HЕUREKA-2009. May 20-22, 2009, Lviv, Ukraine, p. С38 (in Ukrainian).

5. 5. V.I. Talanin, I.E. Talanin, Recombination parameters of intrinsic point defects in dislocationfree silicon monocrystals // Skladni systemy i procesy No. 1, p. 21-31 (2005) (in Ukrainian).